View IRFP3206PBF_4205841.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 97127
IRFP3206PBF
HEXFET(R) Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
D
VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
D
60V 2.4m: 3.0m: 200A c 120A
S
G
D
S
TO-247AC
G D S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Max.
200c 140c 120 840 280 1.9 20 5.0 -55 to + 175 300 10lbxin (1.1Nxm) 170 See Fig. 14, 15, 22a, 22b,
Units
A
W W/C V V/ns
C
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy e Avalanche Current d Repetitive Avalanche Energy g mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA
Parameter
Junction-to-Case j Case-to-Sink, Flat Greased Surface Junction-to-Ambient j
Typ.
--- 0.24 ---
Max.
0.54 --- 40
Units
C/W
www.irf.com
1
3/3/08
IRFP3206PBF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS RG
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
Min. Typ. Max. Units
60 --- --- 2.0 --- --- --- --- --- --- 0.07 2.4 --- --- --- --- --- 0.7 --- --- 3.0 4.0 20 250 100 -100 ---
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mAd m VGS = 10V, ID = 75A g V VDS = VGS, ID = 150A A VDS =60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd)
Min. Typ. Max. Units
--- 120 29 35 85 19 82 55 83 6540 720 360 1040 1230 --- 170 --- --- --- --- --- --- --- --- --- --- --- S nC
Conditions
VDS = 50V, ID = 75A ID = 75A VDS =30V VGS = 10V g ID = 75A, VDS =0V, VGS = 10V VDD = 30V ID = 75A RG =2.7 VGS = 10V g VGS = 0V VDS = 50V = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to 48V i, See Fig.11 VGS = 0V, VDS = 0V to 48V h
210 --- --- --- --- Turn-On Delay Time --- Rise Time --- Turn-Off Delay Time --- Fall Time --- Input Capacitance --- Output Capacitance --- Reverse Transfer Capacitance --- Effective Output Capacitance (Energy Related) --- Effective Output Capacitance (Time Related)h ---
ns
pF
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- 200c --- 840 A A
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 75A, VGS = 0V g VR = 51V, --- 33 50 ns TJ = 25C IF = 75A TJ = 125C --- 37 56 di/dt = 100A/s g --- 41 62 nC TJ = 25C TJ = 125C --- 53 80 --- 2.1 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.023mH RG = 25, IAS = 120A, VGS =10V. Part not recommended for use above this value .
ISD 75A, di/dt 360A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as R is measured at TJ approximately 90C
Coss while VDS is rising from 0 to 80% VDSS..
2
www.irf.com
IRFP3206PBF
1000
TOP
1000
VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
BOTTOM
100
100
4.5V
4.5V
10 0.1 1
60s PULSE WIDTH Tj = 25C
10 10 100 0.1 1
60s PULSE WIDTH Tj = 175C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
2.5
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 75A
2.0
ID, Drain-to-Source Current()
VGS = 10V
100
TJ = 175C
10
1.5
TJ = 25C
1
1.0
VDS = 25V
0.1 2.0 3.0 4.0 5.0
60s PULSE WIDTH
6.0 7.0 8.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
12000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Fig 4. Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 75A VDS = 48V VDS= 30V VDS= 12V
10000
16
C, Capacitance (pF)
8000
Ciss
6000
12
8
4000
4
2000
Coss Crss
0 1 10 100
0 0 40 80 120 160 200 QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
3
IRFP3206PBF
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100
TJ = 175C
1000 1msec 100sec
100
10
TJ = 25C
10
10msec
1
1
VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Tc = 25C Tj = 175C Single Pulse 0.1 1 10
DC
0.1 100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
80
240 LIMITED BY PACKAGE 200
ID , Drain Current (A)
ID = 5mA
75
160 120 80 40 0 25 50 75 100 125 150 175 TC , Case Temperature (C)
70
65
60
55 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
2.0
Fig 10. Drain-to-Source Breakdown Voltage
800
EAS, Single Pulse Avalanche Energy (mJ)
1.5
600
ID 21A 33A BOTTOM 120A
TOP
Energy (J)
1.0
400
0.5
200
0.0 0 10 20 30 40 50 60
0 25 50 75 100 125 150 175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
4
www.irf.com
IRFP3206PBF
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
J J 1 1
0.01
R1 R1 2
R2 R2
R3 R3 C 3
Ri (C/W)
(sec)
2
3
0.001
Ci= i/Ri Ci= i/Ri
0.11493 0.0001 0.218028 0.001262 0.206197 0.011922
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1E-006 1E-005 0.0001 0.001 0.01 0.1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01 0.05
10
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C.
1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
200
EAR , Avalanche Energy (mJ)
160
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 120A
120
80
40
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
175
0 25 50 75 100 125 150
Starting TJ , Junction Temperature (C)
PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
5
IRFP3206PBF
4.5
18
VGS(th) Gate threshold Voltage (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75
ID = 1.0A
ID = 1.0mA ID = 250A ID = 150A
16 14 12
IRRM - (A)
10 8 6 4 2 0 IF = 30A VR = 51V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900 1000
100 125 150 175
TJ , Temperature ( C )
dif / dt - (A / s)
Fig 16. Threshold Voltage Vs. Temperature
18 16 14
Fig. 17 - Typical Recovery Current vs. dif/dt
350 300 250
12
QRR - (nC)
IRRM - (A)
10 8 6 4 2 0 IF = 45A VR = 51V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900 1000
200 150 100 50 0 IF = 30A VR = 51V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
dif / dt - (A / s)
Fig. 18 - Typical Recovery Current vs. dif/dt
350 300 250
Fig. 19 - Typical Stored Charge vs. dif/dt
QRR - (nC)
200 150 100 50 0 IF = 45A VR = 51V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
6
Fig. 20 - Typical Stored Charge vs. dif/dt
www.irf.com
IRFP3206PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 22a. Unclamped Inductive Test Circuit
LD VDS
Fig 22b. Unclamped Inductive Waveforms
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 23a. Switching Time Test Circuit
Current Regulator Same Type as D.U.T.
Fig 23b. Switching Time Waveforms
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
www.irf.com
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
7
IRFP3206PBF
Dimensions are shown in millimeters (inches)
TO-247AC Package Outline
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 IN T HE AS S EMBLY LINE "H" Note: "P" in as s embly line position indicates "Lead-Free" INTERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRFPE30
56 135H 57
DAT E CODE YEAR 1 = 2001 WEEK 35 LINE H
TO-247AC packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/08
8
www.irf.com

▲Up To Search▲

Price & Availability of IRFP3206PBF

	To Download IRFP3206PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .